![Onsemi NXH80T120L3Q0S3G NXH80T120L3Q0S3G Igbt Module Dual [Half Bridge] 75 A 1.7 V 188 W 175 °C New](http://www.tanotis.com/cdn/shop/products/Tanotis_no_image_b1e2bb7e-b76a-4bb9-ba26-3738d38ae1b4_{width}x.png?v=1651003062)
![Onsemi NXH80T120L3Q0S3G NXH80T120L3Q0S3G Igbt Module Dual [Half Bridge] 75 A 1.7 V 188 W 175 °C New](http://www.tanotis.com/cdn/shop/products/Tanotis_no_image_b1e2bb7e-b76a-4bb9-ba26-3738d38ae1b4_1024x.png?v=1651003062)
| ₹ 7853.09 includes GST and import duties. | |
| B2B customers can avail ₹ 1197.6 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
This is a NXH80T120L3Q0S3G IGBT Module , Dual [Half Bridge], 75 A, 1.7 V, 188 W, 175 °C, Module New product from ONSEMI with the model number NXH80T120L3Q0S3G
Product details
| IGBT Configuration | Dual [Half Bridge] |
| DC Collector Current | 75A |
| Collector Emitter Saturation Voltage Vce(on) | 1.7V |
| Power Dissipation Pd | 188W |
| Junction Temperature Tj Max | 175°C |
| Transistor Case Style | Module |
| IGBT Termination | Solder Pin |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| IGBT Technology | IGBT [Trench/Field Stop] |
| Product Range | - |
Other details
| Brand | ONSEMI |
| Part Number | NXH80T120L3Q0S3G |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 7696.03 |
| 3-5 | ₹ 7617.5 |
| 5-10 | ₹ 7460.44 |
| 10+ | ₹ 7303.37 |
Bulk discount will be automatically applied during checkout based on quantity.