| ₹ 31847.35 includes GST and import duties. | |
| B2B customers can avail ₹ 4856.72 ITC on this product | |
| 100% Secure Payments | 100% Genuine product | |
| The product is eligible for Free Shipping |
Description
This is a NXH350N100H4Q2F2P1G IGBT Module , Si/SiC Hybrid Module, EliteSiC, Four Pack, 303 A, 1.63 V, 592 W, 175 °C, Module product from ONSEMI with the model number NXH350N100H4Q2F2P1G
Product details
| IGBT Configuration | Four Pack |
| Continuous Collector Current | 303A |
| Collector Emitter Saturation Voltage | 1.63V |
| Power Dissipation | 592W |
| Operating Temperature Max | 175°C |
| Transistor Case Style | Module |
| IGBT Termination | Press Fit |
| Collector Emitter Voltage Max | 1kV |
| IGBT Technology | IGBT [Trench/Field Stop] |
| Transistor Mounting | Panel |
| Product Range | - |
Other details
| Brand | ONSEMI |
| Part Number | NXH350N100H4Q2F2P1G |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 31210.4 |
| 3-5 | ₹ 30891.93 |
| 5-10 | ₹ 30254.98 |
| 10+ | ₹ 29618.04 |
Bulk discount will be automatically applied during checkout based on quantity.