100V, 273A, 1.7mohm single N-channel power MOSFET, This N-channel PTNG 100V MV MOSFET is produced using ON Semiconductor's advanced Power Trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. Typical applications include motor control, DC-DC converters, battery management/protection, power tools, E-scooters, drones, battery packs/ energy storage units, telecom, netcom and power supplies.
- Very low RDS(on), shielded gate trench technology minimize conduction losses
- Low profile PQFN 8x8 package, small footprint (8x8 mm) for compact design
- Maximum junction temperature of 175°C
- Soft body diode with low Qrr, reduces switching spike
- High peak current and low parasitic inductance
- Offers a wider design margin for thermally challenged applications
- Low QG and capacitance to minimize driver losses
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
NTMTS1D6N10MCTXG |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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