| ₹ 3404.62 includes GST and import duties. | |
| B2B customers can avail ₹ 519.2 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
NTH4L020N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are UPS, DC-DC converter, boost inverter.
- 100% avalanche tested
- High speed switching with low capacitance (Coss = 258pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current is 102A at TC = 25°C
- Power dissipation is 255W at TC = 100°C
- Pulsed drain current is 408A at TA = 25°C
- Operating junction and storage temperature range from -55 to +175°C
- TO-247-4LD package
Product details
Other details
| Brand | ONSEMI |
| Part Number | NTH4L020N120SC1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 3336.53 |
| 3-5 | ₹ 3302.48 |
| 5-10 | ₹ 3234.39 |
| 10+ | ₹ 3166.3 |
Bulk discount will be automatically applied during checkout based on quantity.