₹ 224.98 includes GST and import duties. | |
B2B customers can avail ₹ 34.31 ITC on this product | |
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Description
The NTD20N03L27T4G is a N-channel logic level vertical general purpose Power MOSFET provides the best of design in a power package. Avalanche energy issues make this part is an ideal design. The drain-to-source diode has an ideal fast but soft recovery.
- Ultra-low RDS (ON), single base, advanced technology
- Diode is characterized for use in bridge circuits
- IDSS and VDS (ON) Specified at elevated temperatures
- High avalanche energy specified
- ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
- -55 to 175°C Operating temperature range
Applications
Power Management, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: N Channel |
Drain Source Voltage Vds: 30V |
Continuous Drain Current Id: 20A |
Drain Source On State Resistance: 0.023ohm |
Transistor Case Style: TO-252 (DPAK) |
Transistor Mounting: Surface Mount |
Rds(on) Test Voltage: 5V |
Gate Source Threshold Voltage Max: 1.6V |
Power Dissipation: 74W |
No. of Pins: 4Pins |
Operating Temperature Max: 150°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | ONSEMI |
Part Number | NTD20N03L27T4G |
Quantity | Each |
Technical Data Sheet EN | ![]() |
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Bulk Discount
Quantity | Price |
2 | ₹ 220.48 |
3-5 | ₹ 218.23 |
5-10 | ₹ 213.73 |
10+ | ₹ 209.23 |
Bulk discount will be automatically applied during checkout based on quantity.