The NDT451AN is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
NDT451AN |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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| EOL Notices EN |
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