NCD57530 is a high-current two channel isolated IGBT gate driver with 5KVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3V to 20V bias voltage and signal levels on the input side and up to 32V bias voltage on the output side. Typical applications are EV chargers, motor control, uninterruptible power supplies (UPS), industrial power supplies, solar inverters, automotive applications.
- Configurable as a dual low-side or dual high-side or half-bridge driver
- Programmable overlap or dead time control
- Enable pin for independent driver control
- Case 752AJ for improved insulation between output channels
- IGBT gate clamping during short circuit, short propagation delays with accurate matching
- Tight UVLO thresholds on all power supplies, 1200V working voltage (per VDE0884-11 requirements)
- High common mode transient immunity
- Industrial qualified
- SOIC-16 wide body (less pin 12 and 13) package
Other details
| Brand |
ONSEMI |
| Part Number |
NCD57530DWKR2G |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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