NCD57090 is high-current single channel IGBT/MOSFET gate drivers with 5KVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as active miller clamp for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide body SOIC-8 package. Typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies and solar inverters.
- High peak output current (+6.5A/-6.5A)
- Low clamp voltage drop eliminates the need of negative power supply to prevent spurious gate turn-on
- Short propagation delays with accurate matching
- IGBT/MOSFET gate clamping during short circuit
- IGBT/MOSFET gate active pull down
- Tight UVLO thresholds for bias flexibility
- 3.3V, 5V and 15V logic input, 5KVrms galvanic isolation
- High transient immunity, high electromagnetic immunity
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
NCD57090DDWR2G |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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