The FQD5P10TM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 6.3nC typical low gate charge
- 18pF typical low Crss
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
FQD5P10TM |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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| EOL Notices EN |
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