| ₹ 401.31 includes GST and import duties. | |
| B2B customers can avail ₹ 61.2 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 18A Pulsed drain current
Industrial, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | ONSEMI |
| Part Number | FDS89141 |
| Quantity | |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 393.28 |
| 3-5 | ₹ 389.27 |
| 5-10 | ₹ 381.24 |
| 10+ | ₹ 373.22 |
Bulk discount will be automatically applied during checkout based on quantity.