The FDMS86200 is a N-channel MOSFET is produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- Advanced package and silicon combination for low RDS (ON) and high efficiency
- MSL1 Robust package design
- 100% UIL tested
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
Brand |
ONSEMI |
Part Number |
FDMS86200 |
Quantity |
Each |
Technical Data Sheet EN |
|
Technical Data Sheet EN |
|
Product Change Notice EN |
|
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.