₹ 108.0 includes GST and import duties. | |
B2B customers can avail ₹ 16.47 ITC on this product | |
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Description
The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) <1V)
- Very small package outline
- ±8V Gate to source voltage
- 1.2A Continuous drain current
- 6A Pulsed drain current
Industrial, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
Brand | ONSEMI |
Part Number | FDG1024NZ |
Quantity | Each |
Technical Data Sheet EN | |
Product Change Notice EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 105.84 |
3-5 | ₹ 104.76 |
5-10 | ₹ 102.6 |
10+ | ₹ 100.44 |
Bulk discount will be automatically applied during checkout based on quantity.