The FDD86102 is a N-channel MOSFET produced using advanced PowerTrench® process.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Very low Qg and Qgd compared to competing Trench technologies
- Fast switching speed
- 100% UIL tested
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
FDD86102 |
| Quantity |
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| Technical Data Sheet EN |
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| Product Change Notice EN |
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