| ₹ 81.44 includes GST and import duties. | |
| B2B customers can avail ₹ 12.42 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDC640P is a 2.5V specified P-channel MOSFET uses a rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V).
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: P Channel |
| Drain Source Voltage Vds: 20V |
| Continuous Drain Current Id: 4.5A |
| Drain Source On State Resistance: 0.039ohm |
| Transistor Case Style: SuperSOT |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 4.5V |
| Gate Source Threshold Voltage Max: 1V |
| Power Dissipation: 1.6W |
| No. of Pins: 6Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | ONSEMI |
| Part Number | FDC640P |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 79.81 |
| 3-5 | ₹ 79.0 |
| 5-10 | ₹ 77.37 |
| 10+ | ₹ 75.74 |
Bulk discount will be automatically applied during checkout based on quantity.