| ₹ 85.66 includes GST and import duties. | |
| B2B customers can avail ₹ 13.06 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N and P Channel |
| Drain Source Voltage Vds N Channel: 25V |
| Drain Source Voltage Vds P Channel: 25V |
| Continuous Drain Current Id N Channel: 680mA |
| Continuous Drain Current Id P Channel: 460mA |
| Drain Source On State Resistance N Channel: 0.45ohm |
| Drain Source On State Resistance P Channel: 1.1ohm |
| Transistor Case Style: SuperSOT |
| No. of Pins: 6Pins |
| Power Dissipation N Channel: 900mW |
| Power Dissipation P Channel: 900mW |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | ONSEMI |
| Part Number | FDC6321C |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 83.95 |
| 3-5 | ₹ 83.09 |
| 5-10 | ₹ 81.38 |
| 10+ | ₹ 79.66 |
Bulk discount will be automatically applied during checkout based on quantity.