₹ 120.15 includes GST and import duties. | |
B2B customers can avail ₹ 18.32 ITC on this product | |
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Description
The FDC6318P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.5A Continuous drain/output current
- -7A Pulsed drain/output current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: P Channel |
Drain Source Voltage Vds N Channel: - |
Drain Source Voltage Vds P Channel: 12V |
Continuous Drain Current Id N Channel: - |
Continuous Drain Current Id P Channel: 2.5A |
Drain Source On State Resistance N Channel: - |
Drain Source On State Resistance P Channel: 0.09ohm |
Transistor Case Style: SuperSOT |
No. of Pins: 6Pins |
Power Dissipation N Channel: - |
Power Dissipation P Channel: 960mW |
Operating Temperature Max: 150°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | ONSEMI |
Part Number | FDC6318P |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 117.75 |
3-5 | ₹ 116.55 |
5-10 | ₹ 114.14 |
10+ | ₹ 111.74 |
Bulk discount will be automatically applied during checkout based on quantity.