| ₹ 87.07 includes GST and import duties. | |
| B2B customers can avail ₹ 13.28 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Motor Drive & Control, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds N Channel: 20V |
| Drain Source Voltage Vds P Channel: - |
| Continuous Drain Current Id N Channel: 2.7A |
| Continuous Drain Current Id P Channel: - |
| Drain Source On State Resistance N Channel: 0.08ohm |
| Drain Source On State Resistance P Channel: - |
| Transistor Case Style: SuperSOT |
| No. of Pins: 6Pins |
| Power Dissipation N Channel: 960mW |
| Power Dissipation P Channel: - |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | ONSEMI |
| Part Number | FDC6305N |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 85.33 |
| 3-5 | ₹ 84.46 |
| 5-10 | ₹ 82.72 |
| 10+ | ₹ 80.98 |
Bulk discount will be automatically applied during checkout based on quantity.