The FDB2710 is a N-channel MOSFET produced using PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
ONSEMI |
| Part Number |
FDB2710 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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| Technical Data Sheet EN |
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| Product Change Notice EN |
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