₹ 829.28 includes GST and import duties. | |
B2B customers can avail ₹ 126.47 ITC on this product | |
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Description
The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Collector-base voltage (Vcbo = 120V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Product details
Power Dissipation Pd | 200W |
DC Collector Current | 30A |
Collector Emitter Voltage V(br)ceo | 120V |
Transition Frequency ft | - |
Operating Temperature Max | 200°C |
Transistor Polarity | NPN |
DC Current Gain hFE | 1000hFE |
No. of Pins | 2Pins |
Product Range | - |
Automotive Qualification Standard | - |
Transistor Case Style | TO-204AA |
MSL | - |
Other details
Brand | ON SEMICONDUCTOR |
Part Number | MJ11016G |
Quantity | Each |
Technical Data Sheet EN | |
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Bulk Discount
Quantity | Price |
2 | ₹ 812.69 |
3-5 | ₹ 804.4 |
5-10 | ₹ 787.82 |
10+ | ₹ 771.23 |
Bulk discount will be automatically applied during checkout based on quantity.