| ₹ 2190.0 includes GST and import duties. | |
| B2B customers can avail ₹ 333.98 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
ON Semiconductor NVBG160N120SC1 160mΩ SiC MOSFET provides superior switching performance and higher reliability compared to Silicon.
Features & Specs
- Superior switching performance and higher reliability compared to Silicon
- 160mΩ typical drain-to-source resistance (RDS(on))
- 1200V drain-to-source resistance (V(BR)DSS)
- 19.5A maximum drain current (ID)
- 33.8nC ultra-low gate charge (QG(tot))
- 50.7pF low effective output capacitance (typical) (COSS)
- Qualified for automotive applications according to AEC-Q101
- 100% avalanche tested
Features & Specs
- Superior switching performance and higher reliability compared to Silicon
- 160mΩ typical drain-to-source resistance (RDS(on))
- 1200V drain-to-source resistance (V(BR)DSS)
- 19.5A maximum drain current (ID)
- 33.8nC ultra-low gate charge (QG(tot))
- 50.7pF low effective output capacitance (typical) (COSS)
- Qualified for automotive applications according to AEC-Q101
- 100% avalanche tested
Documentation
WARNING: This product may contain chemicals known to the State of California to cause cancer and birth defects or other reproductive harm. See link below for more information. www.P65Warnings.ca.gov
Bulk Discount
| Quantity | Price |
| 2 | ₹ 2146.2 |
| 3-5 | ₹ 2124.3 |
| 5-10 | ₹ 2080.5 |
| 10+ | ₹ 2036.7 |
Bulk discount will be automatically applied during checkout based on quantity.