650 V, 50 mR Gallium Nitride (GaN) FET is a normally-off device that combines Nexperia's state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies offering superior reliability and performance. Typical applications include Hard and soft switching converters for industrial and datacom power, bridgeless totem pole PFC, PV and UPS inverters and servo motor drives.
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability (800 V)
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
NEXPERIA |
| Part Number |
GAN063-650WSAQ |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Application Note EN |
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| Enhanced Product Overview EN |
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