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Description
Product Overview
The 2N3637 is an NPN silicon transistor designed for general-purpose amplifier and switching applications. This transistor features a high breakdown voltage and moderate current handling capabilities, making it suitable for low to medium-power circuits.
- High Voltage Capability: The 2N3637 has a maximum collector-emitter breakdown voltage of 175V, making it suitable for high voltage applications.
- The transistor has a maximum power dissipation of 1W, allowing it to handle moderate power levels.
- Minimum DC current gain of 100, making it suitable for amplifier applications.
- Maximum Vce saturation of 600mV, reducing power losses and improving efficiency.
- TO-5-3 metal can package, providing a rugged and reliable packaging option.
- The transistor is compatible with a wide range of circuits and systems, making it a versatile component for designers.
Applications
Audio, Industrial, Medical, Radar Systems
Product details
Other details
Brand | MULTICOMP PRO |
Part Number | 2N3637 |
Quantity | Each |
Technical Data Sheet EN | ![]() |
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Bulk Discount
Quantity | Price |
2 | ₹ 364.84 |
3-5 | ₹ 361.12 |
5-10 | ₹ 353.68 |
10+ | ₹ 346.23 |
Bulk discount will be automatically applied during checkout based on quantity.