| ₹ 582.67 includes GST and import duties. | |
| B2B customers can avail ₹ 88.86 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor.
- Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
- Collector-emitter saturation voltage(Vceo (sat) = 2V maximum at Ic = 10A)
- Collector-base voltage(Vcbo = 100V)
- Emitter-base voltage(Vebo = 5V)
Applications
Industrial
Product details
| Power Dissipation Pd | 125W |
| DC Collector Current | 16A |
| Collector Emitter Voltage V(br)ceo | 100V |
| Transition Frequency ft | 6MHz |
| Operating Temperature Max | 150�C |
| Transistor Polarity | PNP |
| DC Current Gain hFE | - |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-247 |
| MSL | - |
Other details
| Brand | MULTICOMP |
| Part Number | BDV66B |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 571.02 |
| 3-5 | ₹ 565.19 |
| 5-10 | ₹ 553.54 |
| 10+ | ₹ 541.88 |
Bulk discount will be automatically applied during checkout based on quantity.