MICRON MT53E768M32D2ZW-046 WT:C DRAM, Mobile LPDDR4, 24 Gbit, 768M x 32bit, 2.133 GHz, TFBGA, 200 Pins

MT53E768M32D2ZW-046 WT:C is a mobile LPDDR4 SDRAM. The 12Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.

• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• Selectable output drive strength (DS), clock-stop capability
• Programmable VSS (ODT) termination, single-ended CK and DQS support
• Operating voltage is 1.10V VDD2/0.60V VDDQ or 1.10V VDDQ, 468ps cycle time
• 3GB (24Gb) total density, 4266Mb/s data rate per pin
• Operating temperature range from -25°C to +85°C, 200-ball TFBGA package