MT47H32M16NF-25E AAT:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. It has JEDEC-standard of 1.8V I/O (SSTL_18-compatible) and differential data strobe (DQS, DQS#) option.
- Operating voltage range is 1.8V (VDD CMOS)
- 32Meg x 16 configuration, automotive qualified, 8D response time
- Packaging style is 84-ball 8mm x 12.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Operating temperature range is -40°C to +105°C, design generation
- Data rate is 800MT/s, 4n-bit prefetch architecture
- DLL to align DQ and DQS transitions with CK, programmable CAS latency (CL)
- Posted CAS additive latency (AL), WRITE latency = READ latency - 1�CK
- Adjustable data-output drive strength, 64ms, 8192-cycle refresh
- On-die termination (ODT), supports JEDEC clock jitter specification
Other details
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MICRON |
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MT47H32M16NF-25E AATH |
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Technical Data Sheet EN |
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Product Change Notice EN |
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