MICRON MT47H128M8SH-25E IT:M DRAM, DDR2, 1 Gbit, 128M x 8bit, 400 MHz, TFBGA, 60 Pins

MT47H128M8SH-25E IT:M is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#).

• 128M8 configuration, tCK = 2.5ns, CL = 5 cycle time
• JEDEC-standard 1.8V I/O (SSTL
• 18-compatible), differential data strobe (DQS, DQS#) option
• Programmable CAS latency (CL), posted CAS additive latency (AL)
• Selectable burst lengths (BL): 4 or 8, adjustable data-output drive strength
• DLL to align DQ and DQS transitions with CK, 8 internal banks for concurrent operation
• Industrial temperature range from -40°C to +85°C
• Package style is 60-ball FBGA