MT42L16M32D1HE-18 IT:E is a LPDDR2 SDRAM. It is a 512Mb mobile low-power DDR2 SDRAM (LPDDR2) and high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. This memory is internally configured as an eight-bank DRAM. Each of the x32's 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits. It has multiplexed, double data rate, command/address inputs; commands entered on every CK edge. It has bidirectional/differential data strobe per byte of data (DQS/DQS#), programmable READ and WRITE latencies (RL/WL).
- Operating voltage range is 1.2V
- 16Meg x 32 configuration
- Packaging style is 134-ball FBGA, 10mm x 11.5mm
- Cycle time is 1.875ns, �CK RL = 8, LPDDR2, 1die addressing
- Operating temperature range is -40�C to +85�C, fifth generation
- Clock rate is 533MHz, data rate is 1066Mb/s/pin
- Ultra low-voltage core and I/O power supplies, four-bit prefetch DDR architecture
- Eight internal banks for concurrent operation, per-bank refresh for concurrent operation
- Partial-array self refresh (PASR), deep power-down mode (DPD)
- Selectable output drive strength (DS), clock stop capability
Other details
| Brand |
MICRON |
| Part Number |
MT42L16M32D1HE-18 ITE |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
| Manufacturer Product Page EN |
|
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
