MT41K256M16TW-107:P is a DDR3L SDRAM (1.35V). It is a low voltage version of the DDR3 (1.5V) SDRAM.
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL), programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode, self refresh temperature, automatic self refresh, write levelling
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
MICRON |
| Part Number |
MT41K256M16TW-107P |
| Quantity |
Each |
| Technical Data Sheet EN |
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