MICRON MT29F1G08ABBFAH4-ITE:F Flash Memory, SLC NAND, 1 Gbit, 128M x 8bit, Parallel, VFBGA, 63 Pins

MT29F1G08ABBFAH4-ITE:F is a NAND flash device that includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, addresses, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip-enabled signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status.

• 1Gb density, 8-bit device width, SLC level, 1 die, nCE, RnB and I/O Channel
• Operating voltage range from 1.8V (1.7 to 1.95V), feature set F, asynchronous only interface
• Internal ECC enabled by default (Parallel), production status, design Revision F (shrink)
• Open NAND Flash Interface (ONFI) 1.0-compliant1, single-level cell (SLC) technology
• Page size x8: 2176 bytes (2048 + 128 bytes), block size: 64 pages (128K + 8K bytes)
• Plane size: 1 planes x 1024 blocks per plane, device size: 1Gb: 1024 blocks
• Asynchronous I/O performance, tRC/tWC: 20ns/20ns (3.3V), 30ns/30ns (1.8V)
• Read page: 80µs, program page: 220µs (TYP 3.3V/1.8V), erase block: 2ms (TYP)
• Command set: ONFI NAND Flash Protocol, program page cache mode, read page cache mode
• 63-ball VFBGA package, industrial operating temperature range from -40°C to +85°C