| ₹ 110.66 includes GST and import duties. | |
| B2B customers can avail ₹ 16.88 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The LND150N8-G is a N-channel depletion-mode DMOS FET utilizing Supertex's lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 500V |
| Continuous Drain Current Id: 30mA |
| Drain Source On State Resistance: 850ohm |
| Transistor Case Style: SOT-89 |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 0V |
| Gate Source Threshold Voltage Max: - |
| Power Dissipation: 1.6W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | MICROCHIP |
| Part Number | LND150N8-G |
| Quantity | |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Bulk Discount
| Quantity | Price |
| 2 | ₹ 108.45 |
| 3-5 | ₹ 107.34 |
| 5-10 | ₹ 105.13 |
| 10+ | ₹ 102.91 |
Bulk discount will be automatically applied during checkout based on quantity.