| ₹ 139.32 includes GST and import duties. | |
| B2B customers can avail ₹ 21.25 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The DN3545N8-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS device. Characteristic of all MOS structure, this device is free from thermal runaway and thermally-induced secondary breakdown. The normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed are desired.
- Low ON-resistance
- Free from secondary breakdown
- Low input and output leakage
Applications
Power Management, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 450V |
| Continuous Drain Current Id: 200mA |
| Drain Source On State Resistance: 20ohm |
| Transistor Case Style: SOT-89 |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 0V |
| Gate Source Threshold Voltage Max: - |
| Power Dissipation: 1.6W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | MICROCHIP |
| Part Number | DN3545N8-G |
| Quantity | |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 136.53 |
| 3-5 | ₹ 135.14 |
| 5-10 | ₹ 132.35 |
| 10+ | ₹ 129.57 |
Bulk discount will be automatically applied during checkout based on quantity.