| ₹ 111.12 includes GST and import duties. | |
| B2B customers can avail ₹ 16.95 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The DN2530N3-G is a N-channel depletion-mode vertical DMOS FET utilizes an advanced vertical diffusion metal oxide semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in metal-oxide semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS field-effect transistor (FET) is ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
- Low ON-resistance
- Free from secondary breakdown
- Low input and output leakages
Power Management, Communications & Networking
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | MICROCHIP |
| Part Number | DN2530N3-G |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 108.9 |
| 3-5 | ₹ 107.79 |
| 5-10 | ₹ 105.56 |
| 10+ | ₹ 103.34 |
Bulk discount will be automatically applied during checkout based on quantity.