N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in high voltage power supplies, capacitor discharge applications and pulse circuits applications.
- High voltage power MOSFET
- Moulding epoxies meet UL94V-0 flammability classification
- High blocking voltage
- Easy to mount
- Space savings
- High power density
Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
1.5kV
|
| Continuous Drain Current Id:
3A
|
| Drain Source On State Resistance:
7.3ohm
|
| Transistor Case Style:
TO-263
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
5V
|
| Power Dissipation:
250W
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
-
|
| Qualification:
-
|
| MSL:
-
|
Other details
| Brand |
LITTELFUSE |
| Part Number |
IXTA3N150HV |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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