N-channel enhancement mode avalanche rated fast intrinsic diode. Suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- TrenchT2� HiperFET� power MOSFET
- High current handling capability
- Dynamic dv/dt rated
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
175V
|
| Continuous Drain Current Id:
150A
|
| Drain Source On State Resistance:
0.012ohm
|
| Transistor Case Style:
TO-247
|
| Transistor Mounting:
Through Hole
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
4.5V
|
| Power Dissipation:
880W
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
175°C
|
| Product Range:
-
|
| Qualification:
-
|
| MSL:
-
|
Other details
| Brand |
LITTELFUSE |
| Part Number |
IXFH150N17T2 |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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