Product details
Technical Specifications
Drain Source Voltage Vds
100V
Product Range
GigaMOS HiperFET
Continuous Drain Current Id
420A
Drain Source On State Resistance
0.0023ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (12-Jan-2017)
Other details
| Brand |
IXYS SEMICONDUCTOR |
| Part Number |
IXFN420N10T |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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