| ₹ 1585.14 includes GST and import duties. | |
| B2B customers can avail ₹ 241.73 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IXFH170N10P is a Polar� single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET�). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for switch-mode and resonant-mode power supplies, DC-to-DC converters and laser drivers.
- International standard packages
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Motor Drive & Control, Robotics
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 100V |
| Continuous Drain Current Id: 170A |
| Drain Source On State Resistance: 0.009ohm |
| Transistor Case Style: TO-247 |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 15V |
| Gate Source Threshold Voltage Max: 5V |
| Power Dissipation: 714W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 175°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | IXFH170N10P |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1553.44 |
| 3-5 | ₹ 1537.59 |
| 5-10 | ₹ 1505.88 |
| 10+ | ₹ 1474.18 |
Bulk discount will be automatically applied during checkout based on quantity.