Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type:
N Channel
|
Drain Source Voltage Vds:
1.2kV
|
Continuous Drain Current Id:
30A
|
Drain Source On State Resistance:
0.35ohm
|
Transistor Case Style:
PLUS264
|
Transistor Mounting:
Through Hole
|
Rds(on) Test Voltage:
10V
|
Gate Source Threshold Voltage Max:
6.5V
|
Power Dissipation:
1.25kW
|
No. of Pins:
3Pins
|
Operating Temperature Max:
150°C
|
Product Range:
Polar HiPerFET
|
Qualification:
-
|
Other details
Brand |
IXYS SEMICONDUCTOR |
Part Number |
IXFB30N120P |
Quantity |
Each |
Technical Data Sheet EN |
|
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