IS62WV25616EBLL-45BLI is a 256Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 4M bit static RAM organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs. The active LOW write enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and lower byte (LB#) access.
- High-speed access time is 45ns
- Operating current is 22mA (max) at 85°C, CMOS standby current is 3.7uA (typ) at 25°C
- TTL compatible interface levels
- Single power supply is 2.2V-3.6V VDD
- Input capacitance is 6pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- Mini BGA (6mm x 8mm) package
- Industrial temperature rating range from -40°C to +85°C
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS62WV25616EBLL-45BLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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