IS62WV12816EBLL-45BLI is a 128Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 2Mbit static RAM organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using a chip enable and output enable inputs. The active LOW write enables (WE#) to control both the writing and reading of the memory. A data byte allows upper byte (UB#) and lower byte (LB#) access.
- High-speed access time is 45ns
- Operating current is 18mA (max) at 85°C, CMOS standby current is 5.4uA (typ) at 25°C
- TTL compatible interface levels
- Single power supply is 2.2V to 3.6V VDD
- Three state outputs
- Input capacitance is 10pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- Mini BGA (6mm x 8mm) package
- Industrial temperature rating range from -40°C to +85°C
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS62WV12816EBLL-45BLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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