IS61WV6416EEBLL-10TLI is a 64K x 16 high-speed asynchronous CMOS static RAM with ECC. It is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When active-low CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs, CE and OE. The active LOW write enable (active-low WE) controls both writing and reading of the memory. A data byte allows upper byte (active-low UB) and lower byte (active-low LB) access.
- High-speed access time is 10ns
- Low active power is 85mW (typical)
- Low standby power is 7mW (typical) CMOS standby
- Fully static operation: no clock or refresh required
- Single power supply, three state outputs
- Data control for upper and lower bytes
- Error detection and error correction
- Input capacitance is 6pF (Vin = 0V)
- TSOP (Type II) package
- Industrial temperature rating range from -40°C to +85°C
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS61WV6416EEBLL-10TLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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