IS61WV25616EDBLL-10BLI is a 256K x 16 high-speed asynchronous CMOS static RAM with ECC. It is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low-power consumption devices. When active-low CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs, active-low CE and active-low OE. The active LOW write enable (active-low WE) controls both the writing and reading of the memory. A data byte allows upper byte (active-low UB) and lower byte (active-low LB) access.
- High-speed access time is 10ns, single power supply is Vdd 2.4V to 3.6V
- Low active power is 85mW (typical), low standby power is 7mW (typical) CMOS standby
- Fully static operation: no clock or refresh required
- Three state outputs, data control for upper and lower bytes
- Error detection and error correction
- Input/output capacitance is 8pF (Vout = 0V)
- 48 mini BGA package
- Industrial temperature rating range from -40°C to +85°C
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS61WV25616EDBLL-10BLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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