IS43LD16128C-18BLI is a 128Mb x 16, 2Gbit CMOS mobile LPDDR2 DRAM. The device is organized as 8 banks of 16Meg words of 16bits or 8Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4n bits are prefetched to achieve very high bandwidth.
- Low-voltage core and I/O power supplies VDD2 = 1.14-1.3V, VDDCA/VDDQ = 1.14-1.3V, VDD1 = 1.7-1.95V
- High speed un-terminated logic (HSUL-12) I/O interface
- Four-bit pre-fetch DDR architecture, eight internal banks for concurrent operation
- Multiplexed, double data rate, command/address inputs
- Bidirectional/differential data strobe per byte of data (DQS/DQS#), ZQ calibration
- On-chip temperature sensor to control self-refresh rate
- Partial -array self-refresh (PASR), deep power-down mode (DPD)
- 533MHz clock frequency
- 134 ball BGA package
- Industrial temperature rating range from -40°C to +85°C
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS43LD16128C-18BLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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