IS34ML04G081-TLI is a 4Gb SLC-1b ECC 3.3V X8 NAND flash memory standard NAND interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4,096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected flash cells. A program operation allows to write the 2,112byte page in typical 400us and an erase operation can be performed in typical 2ms on a 128Kbyte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Word. The I/O pins serve as the ports for address and command inputs as well as data input/output.
- (2K + 64) x 8bit data register, (2K + 64) byte page size, 1bit/memory cell
- Read performance, random read is 25us (max.), serial access is 25ns (max.)
- Write performance, program time is 400us (typical), block erase time is 3ms (typical)
- Single 3.3V (2.7V to 3.6V) voltage supply
- 10mA active read current, 8µA standby current
- Reliable CMOS floating gate technology, ECC requirement: X8 - 1bit/512byte
- Command/address/data multiplexed I/O interface, command register operation
- Hardware data protection, program/erase lockout during power transitions
- Industrial temperature rating range from -40°C to +85°C
- 48-pin TSOP (type I) package
Other details
| Brand |
INTEGRATED SILICON SOLUTION (ISSI) |
| Part Number |
IS34ML04G081-TLI |
| Quantity |
Each |
| Technical Data Sheet EN |
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