INFINEON S29GL512S10TFI013 Flash Memory, Parallel NOR, 512 Mbit, 64M x 8bit, Parallel, TSOP, 56 Pins

S29GL512S10TFI013 is a S29GL512S MIRRORBIT� page-mode flash memory IC fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today�s embedded applications that require higher density, better performance and lower power consumption.

• CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
• Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC
• ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
• Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
• Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
• Status register, data polling, and ready/busy pin methods to determine device status
• Suspend and resume commands for program and erase operations, 100000 program/erase cycles
• Separate 1024-byte one time program (OTP) array with two lockable regions
• 100ns random access time, thin small outline package (TSOP) standard pinout
• VIO=VCC=2.7 V to 3.6V, highest address sector protected, industrial �40 to 85°C temperature range