| ₹ 1832.14 includes GST and import duties. | |
| B2B customers can avail ₹ 279.4 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
S29GL01GS12DHVV10 is a MIRRORBIT� eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today�s embedded applications that require higher density, better performance and lower power consumption.
- 120ns random access time speed
- Fortified ball-grid array package (LAE064) 9 mm x 9mm package type
- Industrial plus temperature range from �40°C to +105°C
- VIO = 1.65V to VCC, VCC = 2.7V to 3.6V, highest address sector protected
- ×16 data bus, asynchronous 32byte page read
- Programming in page multiples, up to a maximum of 512bytes
- Automatic error checking and correction internal hardware ECC with single bit error correction
- Sector erase, uniform 128kbyte sectors
- Suspend and resume commands for program and erase operations
- 100000 program / erase cycles, 20 years data retention
Product details
Other details
| Brand | INFINEON |
| Part Number | S29GL01GS12DHVV10 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1795.5 |
| 3-5 | ₹ 1777.18 |
| 5-10 | ₹ 1740.53 |
| 10+ | ₹ 1703.89 |
Bulk discount will be automatically applied during checkout based on quantity.