₹ 235.19 includes GST and import duties. | |
B2B customers can avail ₹ 35.87 ITC on this product | |
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Description
The IRLR3705ZTRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
- Logic level
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: N Channel |
Drain Source Voltage Vds: 55V |
Continuous Drain Current Id: 42A |
Drain Source On State Resistance: 0.0065ohm |
Transistor Case Style: TO-252AA |
Transistor Mounting: Surface Mount |
Rds(on) Test Voltage: 10V |
Gate Source Threshold Voltage Max: 3V |
Power Dissipation: 130W |
No. of Pins: 3Pins |
Operating Temperature Max: 175°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | INFINEON |
Part Number | IRLR3705ZTRPBF |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 230.49 |
3-5 | ₹ 228.13 |
5-10 | ₹ 223.43 |
10+ | ₹ 218.73 |
Bulk discount will be automatically applied during checkout based on quantity.