₹ 202.03 includes GST and import duties. | |
B2B customers can avail ₹ 30.81 ITC on this product | |
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Description
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
Brand | INFINEON |
Part Number | IRLR2908TRPBF |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN | ![]() |
Simulation Model EN | ![]() |
Product Change Notice EN | ![]() |
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Bulk Discount
Quantity | Price |
2 | ₹ 197.99 |
3-5 | ₹ 195.97 |
5-10 | ₹ 191.93 |
10+ | ₹ 187.89 |
Bulk discount will be automatically applied during checkout based on quantity.