- Single N-channel HEXFET® power MOSFET
- Logic level gate drive
- Advanced process technology
- Isolated package (High voltage isolation = 2.5KVRMS)
- Sink to lead Creepage dist. = 4.8mm
- Fully avalanche rated
- Low RDS(on)
- Industry-leading quality
- Dynamic dv/dt Rating
- 175°C operating temperature and logic level
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
INFINEON |
| Part Number |
IRLIZ34NPBF |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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| Simulation Model EN |
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