The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Enhanced body diode dV/dt and dI/dt capability
- Fully characterized capacitance and avalanche SOA
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of ±30V
- On resistance Rds(on) of 8mohm at Vgs 10V
- Power dissipation Pd of 520W at 25°C
- Operating junction temperature range from -55°C to 175°C
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
INFINEON |
| Part Number |
IRFP4668PBF |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Simulation Model EN |
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