Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
200V
|
| Continuous Drain Current Id:
65A
|
| Drain Source On State Resistance:
0.0197ohm
|
| Transistor Case Style:
TO-220AB
|
| Transistor Mounting:
Through Hole
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
5V
|
| Power Dissipation:
330W
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
175°C
|
| Product Range:
HEXFET Series
|
| Qualification:
-
|
Other details
| Brand |
INFINEON |
| Part Number |
IRFB4227PBFXKMA1 |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
